The surface electronic structure of Cu on stepped and flat W(110) is d
etermined with inverse photoemission. An intense, Cu-induced surface s
tate is found at 0.6 eV above the Fermi level on W(110). It is located
in the Sigma(1) band gap. On the stepped W(331) surface there is a si
milar state at 0.7 eV. This terrace state shifts down to 0.3 eV when t
he coverage of Cu is reduced such that only a single row of Cu atoms r
emains at a step edge.