COMPARISON OF QUANTIZED HALL RESISTANCES RH(2) AND RH(4) OF A GAAS ALGAAS HETEROSTRUCTURE DEVICE/

Authors
NAGASHIMA N DATE M WAKABAYASHI J KAWAJI S YOSHIHIRO K KINOSHITA J INAGAKI K YAMANOUCHI C
Citation
N. Nagashima et al., COMPARISON OF QUANTIZED HALL RESISTANCES RH(2) AND RH(4) OF A GAAS ALGAAS HETEROSTRUCTURE DEVICE/, IEEE transactions on instrumentation and measurement, 43(4), 1994, pp. 521-525
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
Journal title
IEEE transactions on instrumentation and measurement → ACNP
ISSN journal
00189456
Volume
43
Issue
4
Year of publication
1994
Pages
521 - 525
Database
ISI
SICI code
0018-9456(1994)43:4<521:COQHRR>2.0.ZU;2-9
Abstract
Quantized Hall resistances R(H)(4) and R(H)(2) of a GaAs/AlGaAs hetero structure were compared with reference resistors whose values are clos e to h/4e2 or h/232. The values of the reference resistors were compar ed with a 100 ohm standard resistor via a cryogenic current comparator (CCC) resistance bridge. Results showed that (4 x R(H)(4) - 2 x R(H)( 2))/2 x R(H)(2) = (0.037 +/- 0.019) x 10(-6).