Boron silicide and compounds based on it containing titanium, chromium
, nickel, and yttrium and scandium oxides are studied for their oxidat
ion in air from room temperature to 1300 degrees C. It is shown that c
hromium boride markedly improves the heat resistance of B4Si over a wi
de temperature range (700-1300 degrees C) probably as a result chromiu
m-oxide dissolution in borosilicate glass and alteration of its struct
ure. A favorable effect of yttrium and scandium oxides as well of nick
el silicide appears at above 1000 degrees C as a result of forming com
plex oxide compounds in the scale.