OXIDATION OF BORON SILICIDE AND MATERIALS BASED ON IT

Citation
Ei. Golovko et al., OXIDATION OF BORON SILICIDE AND MATERIALS BASED ON IT, Powder metallurgy and metal ceramics, 32(11-12), 1993, pp. 917-920
Citations number
10
Categorie Soggetti
Material Science, Ceramics","Metallurgy & Mining
ISSN journal
10681302
Volume
32
Issue
11-12
Year of publication
1993
Pages
917 - 920
Database
ISI
SICI code
1068-1302(1993)32:11-12<917:OOBSAM>2.0.ZU;2-8
Abstract
Boron silicide and compounds based on it containing titanium, chromium , nickel, and yttrium and scandium oxides are studied for their oxidat ion in air from room temperature to 1300 degrees C. It is shown that c hromium boride markedly improves the heat resistance of B4Si over a wi de temperature range (700-1300 degrees C) probably as a result chromiu m-oxide dissolution in borosilicate glass and alteration of its struct ure. A favorable effect of yttrium and scandium oxides as well of nick el silicide appears at above 1000 degrees C as a result of forming com plex oxide compounds in the scale.