ELECTRICAL EFFECTS ACCOMPANYING HIGH-TEMP ERATURE DEFORMATION OF CSI AND CSI-CSBR CRYSTALS

Electrization kinetics of CsI and CsI + 7 mol % CsBr crystals surface in the process of high-temperature deformation with 1 . 10-4 s-1 rate in the temperature range 80 - 673 K and currents of afterdeformation t hermostimulated depolarization has been studied. The results obtained show that high-temperature deformed polarization of CsI depends on cha rged dislocation motion and on vacancy diffusion. It is shown that bro mine impurity has decreased the charge on the crystal surface at the r oom temperature deformation as a result of hardening and increased it at a high-temperature deformation taking into account decay of admixtu re complexes. The main result of the work is to demonstrate active par ticipation of point defects motion in the high-temperature deformation of CsI.