2.9V OPERATION GAAS POWER MESFET WITH 31.5-DBM OUTPUT POWER AND 64-PERCENT POWER-ADDED EFFICIENCY

A state-of-the-art GaAs power MESFET operating at a drain bias of 2.9 V has been developed using the high-low doped channel structure grown by molecular beam epitaxy. The device has 0.6 mum gate length and 16 m m gate width. The power performance tested at a 2.9 V drain bias and 9 00 MHz operation frequency was output power of 31.5 dBm with 11.5 dB g ain and 64% power-added efficiency.