CARRIER RECOMBINATION INFLUENCE ON THE SOI MOSFET FLOATING BODY EFFECT

The carrier recombination influence on the floating body effect for fu lly depleted n-channel SOIMOSFET was analyzed by device simulation. It was found that the hole diffusion to the source electrode is negligib ly small and that the surface recombination for the generated hole dom inates the hole extinction, at the subthreshold region. Based on the s imulated result, an analytical model on the hole concentration is prop osed, in which the recombination velocity is explicitly included. The model explains the hole concentration behavior that is responsible for the floating body effect for the fully depleted SOIMOSFET.