IMPACT IONIZATION MODELING USING SIMULATION OF HIGH-ENERGY TAIL DISTRIBUTIONS

Authors
AHN JG YAO CS PARK YJ MIN HS DUTTON RW
Citation
Jg. Ahn et al., IMPACT IONIZATION MODELING USING SIMULATION OF HIGH-ENERGY TAIL DISTRIBUTIONS, IEEE electron device letters, 15(9), 1994, pp. 348-350
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
15
Issue
9
Year of publication
1994
Pages
348 - 350
Database
ISI
SICI code
0741-3106(1994)15:9<348:IIMUSO>2.0.ZU;2-I
Abstract
A new model for the impact ionization using the tail electron density is proposed. A new hydrodynamic model is used to compute the tail carr ier quantities. The discretization method and numerical procedures are explained. The model parameters are extracted from the space-dependen t Monte Carlo simulations. The simulated results for an n+ - n- - n+ d iode and a DILDD n-MOSFET are shown and give good agreement with Monte Carlo simulations and measurements, respectively.