P-N DOUBLE-QUANTUM-WELL RESONANT INTERBAND TUNNELING DIODE WITH PEAK-TO-VALLEY CURRENT RATIO OF 144 AT ROOM-TEMPERATURE

Authors
TSAI HH SU YK LIN HH WANG RL LEE TL
Citation
Hh. Tsai et al., P-N DOUBLE-QUANTUM-WELL RESONANT INTERBAND TUNNELING DIODE WITH PEAK-TO-VALLEY CURRENT RATIO OF 144 AT ROOM-TEMPERATURE, IEEE electron device letters, 15(9), 1994, pp. 357-359
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
15
Issue
9
Year of publication
1994
Pages
357 - 359
Database
ISI
SICI code
0741-3106(1994)15:9<357:PDRITD>2.0.ZU;2-D
Abstract
The current-voltage characteristics of the p-n double quantum well res onant interband tunneling (RIT) diodes in InAlAs/InGaAs system have be en improved in this letter. The peak-to-valley current ratio (PVCR) is as high as 144 at room temperature. As we know, this is the highest r oom temperature PVCR ever reported in any tunneling devices. Moreover, the influence of the central barrier thickness varying from 10 angstr om to 30 A on the device characteristics is also studied.