OPTIMIZATION OF SERIES RESISTANCE IN SUB-0.2 MU-M SOI MOSFETS (VOL 15, PG 145, 1994)

The optimization of device series resistance in ultrathin film SOI dev ices is studied through 2-D simulations and process experiments. The s eries resistance is dependent on the contact resistivity of the silici de to silicon and the silicide geometry. To achieve low series resista nce, very thin silicides that do not fully consume the SOI film are ne eded. A novel cobalt salicidation technology using titanium/cobalt lam inates is used to demonstrate sub-0.2 mum, thin-film SOI devices with excellent performance and very low device series resistance.