ANALYSIS OF CAPACITANCE MEASUREMENTS ON SILICON MICROSTRIP DETECTORS

Authors
BARBERIS E CARTIGLIA N DANN J DUBBS T NOBLE K OSHAUGHNESSY K RAHN J SADROZINSKI HFW WICHMANN R OHSUGI T UNNO Y MIYATA H TAMURA N YAMAMOTO K
Citation
E. Barberis et al., ANALYSIS OF CAPACITANCE MEASUREMENTS ON SILICON MICROSTRIP DETECTORS, IEEE transactions on nuclear science, 41(4), 1994, pp. 785-790
Citations number
18
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
41
Issue
4
Year of publication
1994
Part
1
Pages
785 - 790
Database
ISI
SICI code
0018-9499(1994)41:4<785:AOCMOS>2.0.ZU;2-A
Abstract
We present an analysis of the total strip capacitance of double-sided, AC-coupled silicon microstrip detectors. We evaluate the radiation ha rdness and the noise contribution of different strip geometries. We co mment on a serious failure mode.