RADIATION-DAMAGE TO TETRAMETHLYSILANE AND TETRAMETHLYGERMANIUM IONIZATION CHAMBERS

Authors
HOSHI Y HIGUCHI M OYAMA K AKAISHI H YUTA H ABE K HASEGAWA K SUEKANE F NAGAMINE T KAWAMURA N NEICHI K KATAYAMA J NAKAJIMA T MASUDA K KIKUCHI R MIYANO K
Citation
Y. Hoshi et al., RADIATION-DAMAGE TO TETRAMETHLYSILANE AND TETRAMETHLYGERMANIUM IONIZATION CHAMBERS, IEEE transactions on nuclear science, 41(4), 1994, pp. 853-855
Citations number
9
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
41
Issue
4
Year of publication
1994
Part
1
Pages
853 - 855
Database
ISI
SICI code
0018-9499(1994)41:4<853:RTTATI>2.0.ZU;2-W
Abstract
Two detector media suitable for a warm liquid, ionization chamber fill ed with tetramethylsilane(TMS) and tetramethylgermanium(TMG) were expo sed to gamma radiation from a Co-60 source up to dose 579Gray and 902G ray, respectively. The electron lifetimes and the free ion yields were measured as a function of accumulated radiation dose. A similar behav ior of the electron lifetimes and the free ion yields with increasing radiation dose was observed between the TMS and TMG ionization chamber s.