RESPONSE OF SILICON DETECTOR FOR HIGH-ENERGY X-RAY COMPUTED-TOMOGRAPHY

Citation
H. Miyai et al., RESPONSE OF SILICON DETECTOR FOR HIGH-ENERGY X-RAY COMPUTED-TOMOGRAPHY, IEEE transactions on nuclear science, 41(4), 1994, pp. 999-1003
Citations number
5
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
ISSN journal
00189499
Volume
41
Issue
4
Year of publication
1994
Part
1
Pages
999 - 1003
Database
ISI
SICI code
0018-9499(1994)41:4<999:ROSDFH>2.0.ZU;2-0
Abstract
The suitability of Si-SSD as a detector for high energy X-ray CT has b een investigated. Two types of Si-SSDs which can take the place of ord inary scintillation detectors were proposed. Their predicted responses were compared with that of a CWO scintillation detector of almost the same dimensions by using the EGS4 Monte Carlo simulation code. The se nsitivities of the sole-silicon detector and the metal-sandwiched dete ctor were about ten times higher than that of the CWO scintillation de tector at X-ray energies above 1 MeV. The metal-sandwiched detector wa s judged more useful than the sole Si-SSD when the width of X-ray beam was less than about 0.2 mm. Then the silicon semiconductor detector f or high energy X-ray CT was fabricated and actual measurements of the depletion layer width and the electronic noise contribution were made.