CHARACTERIZATION OF A NEW A-SI H DETECTORS FABRICATED FROM AMORPHOUS-SILICON DEPOSITED AT HIGH-RATE BY HELIUM ENHANCED PECVD

This paper is concerned with the characterization of new detectors fab ricated from a-Si:H films deposited at high rates through the dilution of SiH4 in Helium by PECVD (Plasma Enhanced Chemical Vapor Deposition ) technique. Rates up to ten times (5.5 mum/h) that of the standard te chnique are obtained. We have investigated the electrical characterist ics -depletion voltage, residual space charge density- of the helium d iluted material and compared them to that of the standard material. Fi nally, the response of detectors, fabricated from both materials, to 5 .5 MeV alpha particles are compared.