NEW RESULTS WITH SEMICONDUCTOR DRIFT CHAMBERS FOR X-RAY SPECTROSCOPY

Authors
JALAS P NIEMELA A CHEN W REHAK P CASTOLDI A LONGONI A
Citation
P. Jalas et al., NEW RESULTS WITH SEMICONDUCTOR DRIFT CHAMBERS FOR X-RAY SPECTROSCOPY, IEEE transactions on nuclear science, 41(4), 1994, pp. 1048-1053
Citations number
10
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
41
Issue
4
Year of publication
1994
Part
1
Pages
1048 - 1053
Database
ISI
SICI code
0018-9499(1994)41:4<1048:NRWSDC>2.0.ZU;2-B
Abstract
Silicon Drift Detectors have been tested for X-ray Spectroscopy applic ations. By optimizing the detector-FET connection and using a very low leakage current detector manufacturing process, it has been possible to achieve a very good energy resolution. The resolution and leakage c urrent have been studied as a function of temperature, from room tempe rature down to -30-degrees-C, and as function of active area. Also the effects influencing the peak to background ratio have been outlined.