DEVELOPMENT OF NOVEL FABRICATION TECHNIQUES FOR A SILICON MICRO-VERTEX DETECTOR UNIT USING THE FLIP-CHIP BONDING METHOD

Authors
SAITOH Y TAKEUCHI H MANDAI M KOSEKI O YOSHINO T KANAZAWA H YAMANAKA J MIYAHARA S KAMIYA M FUJITA Y HIGASHI Y IKEDA H IKEDA M KOIKE S MATSUDA T OZAKI H TANAKA M TSUBOYAMA T AVRILLON S OKUNO S HABA J HANAI H TATSUMI D ADACHI K KAWASAKI T NAGASHIMA Y MORI S YUSA K FUKUNAGA C MATSUSHITA T MIYATA H MIYANO K
Citation
Y. Saitoh et al., DEVELOPMENT OF NOVEL FABRICATION TECHNIQUES FOR A SILICON MICRO-VERTEX DETECTOR UNIT USING THE FLIP-CHIP BONDING METHOD, IEEE transactions on nuclear science, 41(4), 1994, pp. 1192-1196
Citations number
5
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
41
Issue
4
Year of publication
1994
Part
1
Pages
1192 - 1196
Database
ISI
SICI code
0018-9499(1994)41:4<1192:DONFTF>2.0.ZU;2-6
Abstract
Full-size models of a detector unit for a silicon microvertex detector were built for the KEK B factory. The Flip-Chip Bonding (FCB) method using a new type anisotropic conductive film (ACF) was examined. The s tructure using the new type ACF and improved fabrication process provi de a sufficient electrical connection and good reliability for the det ector unit.