A FULLY INTEGRATED, MONOLITHIC, CRYOGENIC CHARGE SENSITIVE PREAMPLIFIER USING N-CHANNEL JFETS AND POLYSILICON RESISTORS

Authors
JUNG TS GUCKEL H SEEFELDT J OTT G AHN YC
Citation
Ts. Jung et al., A FULLY INTEGRATED, MONOLITHIC, CRYOGENIC CHARGE SENSITIVE PREAMPLIFIER USING N-CHANNEL JFETS AND POLYSILICON RESISTORS, IEEE transactions on nuclear science, 41(4), 1994, pp. 1240-1245
Citations number
5
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
41
Issue
4
Year of publication
1994
Part
1
Pages
1240 - 1245
Database
ISI
SICI code
0018-9499(1994)41:4<1240:AFIMCC>2.0.ZU;2-P
Abstract
An N-channel JFET process technology for integrated charge sensitive p reamplifiers has been developed. The process integrates multiple pinch -off voltage JFETs fabricated in an n-type epitaxial layer on a low re sistivity p-type substrate. The process also incorporates polysilicon resistors integrated on the same die as the JFETs. The optimized polys ilicon resistors exhibit 1/f noise nearly as good as metal film resist ors at the same current. Results for the integrated amplifier are disc ussed.