Sputtered neutral mass spectrometry (SNMS) with ionization by low-ener
gy electron beam offers several analytical advantages that complement
the capabilities of the major surface analysis techniques: XPS, AES an
d SIMS. These include easy operation on insulator specimens, reduced i
nfluence of topography or sample tilt, low spread of elemental relativ
e sensitivity factors (RSFs) across the periodic table, near-constant
RSFs in different matrices and hence quantification from 100% down to
trace concentrations, ppm detection limits, microprobe operation for d
epth profiling and submicron imaging and depth resolutions as for SIMS
(greater-than-or-equal-to 1 nm). In addition to these analytical perf
ormances, the equipment shares much in common with quadrupole SIMS fac
ilities and, as with that technique, is easily integrated into multite
chnique instruments. This paper compares performances of SNMS and SIMS
on the same samples and presents some imaging and useful yield data f
rom a close-coupled ionizer, which is a new development on the 410 SIM
SLAB. Comparisons are also made between SIMS, SNMS and AES.