LOW-TEMPERATURE REFLOW OF BOROPHOSPHOSILICATE GLASSES MADE FROM ORGANIC AND INORGANIC SOURCES

The flow points for borophosphosilicate glasses made from alkoxide org anic sources were lower than those for borophosphosilicate glasses mad e from inorganic sources. They also showed good dielectric planarising capability as required for the step coverage of dynamic random access memory cells. MOS capacitors passivated with these glasses had normal current-voltage curves, which befitted their use as insulators in pas sivation. Highly doped inorganic borophosphosilicate glasses suffered BPO4 crystallisation, so were unsuitable for use as insulators followi ng reflow. A possible device planarisation method was briefly discusse d.