MODELING OF EXPOSURE AND DEVELOPMENT PROCESSES IN ELECTRON AND ION LITHOGRAPHY

In this paper we describe a complete mathematical model and correspond ing software for the exposure and development process simulations pert inent to electron and ion lithography (EIL). The main steps of this mo del are: (i) exposure process modeling-electron and ion scattering mod el and calculation of dissipated energy, and (ii) development process modeling-solubility rate caluclation and development profiles evolutio n simulation. The models presented for the exposure and development pr ocess simulations are realised by means of a software package. Thus it is possible to predict the final result in the case of EIL under give n initial conditions. The simulation result is very useful when optimi zing particular technological processes in microcircuit lithography. I t can be used for the development of an algorithm to correct the proxi mity effect of real microelectronic structures.