RBS-CHANNELING SPECTRA - SIMULATION OF AS-IMPLANTED SI SAMPLES THROUGH AN EMPIRICAL-FORMULA FOR (100) AXIAL DECHANNELING OF HE IN SILICON

[100] axial RBS-channeling spectra of deep as-implanted Si samples wer e simulated, using an empirical formula describing the dechanneling. T he formula was obtained by dechanneling data in perfect [100] silicon below amorphous Si films. In fact, a single empirical formula fitted t hese data versus the He energy (1-2 MeV), the film area densities (0-1 .3 x 10(18) at./cm2) and the depth in the substrate (0-1 mum). Under t he assumption that the dechanneling due to an amorphous layer is equal to that of an equivalent amount of displaced atoms in a perfect cryst al, the formula was used to obtain the damage profile of as-implanted samples from RBS-channeling spectra.