FORMATION OF PD SILICIDES AND PERIODICITY IN SPUTTERED PD SI NANOMETRIC MULTILAYERS/

Authors
WU LW ZHOU LY WANG B GAO C LIU WH WU ZQ
Citation
Lw. Wu et al., FORMATION OF PD SILICIDES AND PERIODICITY IN SPUTTERED PD SI NANOMETRIC MULTILAYERS/, Solid state communications, 91(10), 1994, pp. 817-819
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
91
Issue
10
Year of publication
1994
Pages
817 - 819
Database
ISI
SICI code
0038-1098(1994)91:10<817:FOPSAP>2.0.ZU;2-R
Abstract
X-ray diffraction (XRD) has been used to study the formation of Pd sil icides and periodicity in sputtered Pd/Si nanometric multilayers. Both Pd2Si and PdSi have been found in as-deposited Pd/Si multilayers with small periods (about 1 approximately 5nm), but only Pd2Si in the case of larger periods. No small angle XRD peak in samples with periods sm aller than 2.6nm indicates that there is no periodicity in these sampl es. It means that roughness of Pd/Si interfaces can reach about 2.0nm and is related to the Pd silicides formation.