IN PLANE ANISOTROPY IN OPTIMALLY DOPED YBA2CU3O6.95

Citation
C. Odonovan et Jp. Carbotte, IN PLANE ANISOTROPY IN OPTIMALLY DOPED YBA2CU3O6.95, Journal of low temperature physics, 105(3-4), 1996, pp. 495-501
Citations number
5
Categorie Soggetti
Physics, Applied
ISSN journal
00222291
Volume
105
Issue
3-4
Year of publication
1996
Pages
495 - 501
Database
ISI
SICI code
0022-2291(1996)105:3-4<495:IPAIOD>2.0.ZU;2-O
Abstract
Single crystals untwinned optimally doped YBa2Cu3O9.65 show a large de gree of anisotropy in a-b plane properties such as resistivity, infrar ed conductivity and value of zero temperature penetration depth. This source of orthorhombicity must ultimately reside in the CuO chains. Us ing a three plane model; 2 CuO2 and one CuO (chain plane), we study so lutions of three coupled BCS equations which include inter- as well as intra-plane coupling. The gaps are found to contain s- as well as d-w ave symmetries. From our solutions, we calculate the penetration depth and compare with experiments.