REDISTRIBUTION AND INCORPORATION OF SI IN GAAS DUE TO INDIUM DOPING

Secondary ion mass spectrometry, X-ray diffraction and low temperature photoluminescence, in conjunction with Hall and etch pit density meas urements, were used to investigate the spatial redistribution and inco rporation of a residual impurity in GaAs due to indium doping, under m olecular beam epitaxy growth and vacuum annealing. The silicon concent ration in the gallium sublattice (Si(Ga)) and the arsenic sublattice ( Si(As)) tends to diminish with indium doping. Thus indium doping purif ies silicon doped epitaxial layers during molecular beam epitaxy growt h.