The crystallization rate of amorphous strontium titanate is enhanced b
y more than an order of magnitude during thermal annealing in water va
por as compared to a dry ambient. Time resolved optical reflectivity (
TRR) has been combined with Rutherford backscattering spectrometry (RB
S) and ion channelling to investigate this effect. Thin amorphous film
s (0.6 mum) were produced on single-crystal substrates of (100) stront
ium titanate by bombardment with 1.9 or 2.0 MeV Pb ions. Specimens wer
e annealed under controlled ambient conditions (H2O, D2O, vacuum, 265-
430-degrees-C) and the solid phase epitaxial crystallization monitored
in situ by TRR (633 nm). The TRR data were calibrated ex situ by tran
smission electron microscopy and RBS measurements. Isotope substitutio
n, nuclear reaction analysis, and secondary-ion-mass spectrometry were
utilized to reveal the uptake of hydrogen and oxygen into the implant
ed layer. Hydrogen is identified as the only species which penetrates
to the crystal/amorphous interface. It is shown that the crystallizati
on rate is proportional to the concentration of diffusing hydrogen (H
or D) at the interface. The data show that the effect of water vapor,
or more precisely, hydrogen, is to reduce the activation energy of cry
stallization from 2.1 to 1.0 eV. It is concluded that hydrogen, provid
ed by the dissociation of water molecules at the surface, is a catalys
t in the crystallization of amorphous strontium titanate.