EFFECT OF BURIED SI-SIO2 INTERFACES ON OXIDATION AND IMPLANT-ENHANCEDDOPANT DIFFUSION IN THIN SILICON-ON-INSULATOR FILMS

The diffusion behavior of phosphorus and boron was used to study point defect kinetics in silicon-on-insulator (SOI) material. Phosphorus ma rker layers were used to study oxidation enhanced diffusion in bulk an d bonded and etched-back silicon-on-insulator (BESOI) material under o xidizing conditions at 750, 800, and 850-degrees-C. An effective inter stitial recombination velocity K(ox) for the buried Si-SiO2 interface in the BESOI material was extracted by fitting the experimentally obta ined phosphorus profiles with SUPREM-IV Simulation results. The data c an be modeled with a time-independent interface recombination velocity . The same parameter set incorporating this extracted recombination ve locity was used to accurately model the implant enhanced diffusion of boron marker layers at 750 and 800-degrees-C in thin SOI films, implyi ng the recombination velocity is independent of the interstitial super saturation. The expression K(ox)/D(I) = 4.7 X 10(-3) exp(+ 1.34/kT) fi ts this work and also a wide range of literature results at higher tem peratures.