RAMAN-SCATTERING STUDY OF [HHK]-GAAS (SI OR CAF2) STRAINED HETEROSTRUCTURES/

Authors
PUECH P LANDA G CARLES R PIZANI PS DARAN E FONTAINE C
Citation
P. Puech et al., RAMAN-SCATTERING STUDY OF [HHK]-GAAS (SI OR CAF2) STRAINED HETEROSTRUCTURES/, Journal of applied physics, 76(5), 1994, pp. 2773-2780
Citations number
29
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
76
Issue
5
Year of publication
1994
Pages
2773 - 2780
Database
ISI
SICI code
0021-8979(1994)76:5<2773:RSO[(O>2.0.ZU;2-V
Abstract
Raman spectroscopy is used to measure the frequency shift, symmetry, a nd activity of long-wavelength optical phonons in several GaAs straine d epilayers. The results are compared with theoretical evaluations usi ng the elastic compliances, phonon deformation potentials, and Raman t ensors. The effect of growth direction ([001], [111], and [112]) and t he substrate nature (Si or CaF2) is analyzed. The importance of nonsta ndard growth directions, [111] or [112], on residual stress and piezoe lectric effect is discussed.