STUDY OF THE OXYGEN-SENSITIVE BEHAVIOR OF YELLOW LEAD-OXIDE BY DEFECTCHEMISTRY

Authors
Citation
Yr. Ma, STUDY OF THE OXYGEN-SENSITIVE BEHAVIOR OF YELLOW LEAD-OXIDE BY DEFECTCHEMISTRY, Journal of applied physics, 76(5), 1994, pp. 2860-2862
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
76
Issue
5
Year of publication
1994
Pages
2860 - 2862
Database
ISI
SICI code
0021-8979(1994)76:5<2860:SOTOBO>2.0.ZU;2-W
Abstract
The dependence of electrical conductivity on ambient oxygen partial pr essure of yellow lead oxide ceramics is investigated. A conduction typ e transition is observed for pure PbO as the oxygen partial pressure v aries through a certain value that corresponds to the minimum conducti vity measured, and the conductivity is found to vary with - 1/4 and 1/4 power of the oxygen partial pressure in the n region and the p reg ion, respectively. It is also found that the conduction transition poi nt can be moved to lower or higher oxygen partial pressures with accep tor or donor impurities doped into PbO. A point defect model of doubly charged oxygen vacancies with concentration affected by impurities is presented for PbO in the investigation and it is demonstrated that th e theory is in good agreement with the experimental results.