Y. Fukuda et al., (NH4)2SX-TREATED INP(001) STUDIED BY HIGH-RESOLUTION X-RAY PHOTOELECTRON-SPECTROSCOPY, Journal of applied physics, 76(5), 1994, pp. 3059-3062
The chemical state of sulfur on (NH4)2Sx-treated InP(001) surfaces has
been studied by high-resolution x-ray photoelectron spectroscopy. We
find three kinds of chemical states of sulfur (S2p3/2 lines at 161.2,
162.0, and 163.4 eV) on the sample treated at RT. It is suggested that
they correspond to sulfur in phosphorus sites (in the second layer of
the InP(001) surface), to sulfur bonded to indium on the first layer,
and to elemental sulfur on sulfide, respectively. One (S2p3/2 = 162.0
eV) of them becomes predominant with long-time exposure to atmosphere
at RT. Upon annealing the sample at 400-degrees-C, the 163.4 eV line
disappears, while the lines at 162.0 and 161.2 eV remain on the surfac
e. A model of the treated surface is presented.