PHOTON-GATED PHOTOCHEMICAL HOLE-BURNING BY ELECTRON-TRANSFER REACTION- ZINC TETRATOLYLTETRABENZOPORPHINE IN POLY(CHLOROMETHYLSTYRENE)

Citation
S. Machida et al., PHOTON-GATED PHOTOCHEMICAL HOLE-BURNING BY ELECTRON-TRANSFER REACTION- ZINC TETRATOLYLTETRABENZOPORPHINE IN POLY(CHLOROMETHYLSTYRENE), Polymer, 35(18), 1994, pp. 3915-3919
Citations number
26
Categorie Soggetti
Polymer Sciences
Journal title
ISSN journal
00323861
Volume
35
Issue
18
Year of publication
1994
Pages
3915 - 3919
Database
ISI
SICI code
0032-3861(1994)35:18<3915:PPHBER>2.0.ZU;2-T
Abstract
We report a new photon-gated photochemical hole burning system involvi ng a donor-acceptor electron transfer reaction in which the electron a cceptor, i.e. a Cl atom, is directly bonded to the matrix polymer chai n in each monomer unit, namely zinc tetratolyltetrabenzoporphine (ZnTT BP)/poly(chloromethylstyrene) (PCMS). The simultaneous irradiation by an Ar+ laser in conjunction with a dye laser forms holes 70 times more efficiently than irradiation by the dye laser alone for this ZnTTBP/P CMS system. The irradiation intensity dependence and the annealing tem perature dependence of the hole depth for a one-colour hole suggest th at the hole formation mechanism for the latter is a non-photochemical process in the PCMS. The quantum efficiency of hole formation by two-c olour irradiation and the gating ratio in PCMS are much larger than th ose found for poly(vinyl chloride).