GENERATION MECHANISM AND THERMAL-STABILITY OF HIGH CARRIER CONCENTRATIONS BY KRF-EXCIMER-LASER DOPING OF SI INTO GAAS

Authors
SUGIOKA K TOYODA K
Citation
K. Sugioka et K. Toyoda, GENERATION MECHANISM AND THERMAL-STABILITY OF HIGH CARRIER CONCENTRATIONS BY KRF-EXCIMER-LASER DOPING OF SI INTO GAAS, Applied physics. A, Solids and surfaces, 59(3), 1994, pp. 233-237
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
Applied physics. A, Solids and surfaces → ACNP
ISSN journal
07217250
Volume
59
Issue
3
Year of publication
1994
Pages
233 - 237
Database
ISI
SICI code
0721-7250(1994)59:3<233:GMATOH>2.0.ZU;2-R
Abstract
The generation mechanism and thermal stability of high carrier concent rations in GaAs formed by KrF-excimer-laser doping with Si using SiH4 gas are investigated. The channeling Particle-Induced X-ray Emission ( PIXE) analysis reveals that a high substitutional fraction of over 90% and preferential replacement of Si atoms on Ga sites result in the ge neration of carrier concentrations as high as 5 x 10(19) cm-3. In addi tion, the thermal stability of the doped regions is studied. The high carrier concentrations in a nonthermal equilibrium state return to a t hermal equilibrium state by post-annealing.