T. Volk et al., OPTICAL-DAMAGE-RESISTANT IMPURITIES IN LITHIUM-NIOBATE, Journal of the Optical Society of America. B, Optical physics, 11(9), 1994, pp. 1681-1687
We analyzed the properties of damage-resistant LiNbO3 crystals doped w
ith Mg, Zn, or In. Damage resistance is due to an essential increase i
n the photoconductivity sigma(p). In the first two compounds the incre
ase in sigma(p) is most pronounced at concentrations exceeding certain
threshold (5.5 mol.% MgO or 7 mol. % ZnO in the congruent melt), wher
eas in In-doped crystals it occurs at any In concentration. The increa
se in sigma(p) is directly related to the reduction of the intrinsic d
efects Nb(Li) because of their substitution by damage-resistant impuri
ties. If an iron impurity is present, then an abrupt decrease in the c
apture cross section of Fe3+ acceptors at Mg or Zn concentrations high
er than the threshold is responsible for the observed increase in sigm
a(p).