INVESTIGATION OF THE MECHANISM RESPONSIBLE FOR THE CORROSION-RESISTANCE OF B IMPLANTED COPPER

Authors
DING PJ WANG W LANFORD WA HYMES S MURARKA SP
Citation
Pj. Ding et al., INVESTIGATION OF THE MECHANISM RESPONSIBLE FOR THE CORROSION-RESISTANCE OF B IMPLANTED COPPER, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 260-263
Citations number
20
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
85
Issue
1-4
Year of publication
1994
Pages
260 - 263
Database
ISI
SICI code
0168-583X(1994)85:1-4<260:IOTMRF>2.0.ZU;2-H
Abstract
Ion implantation is an effective way to passivate copper films. The pr esent work was designed to refine our understanding of the mechanisms which lead to this result. The oxidation of B implanted copper and cop per oxide (Cu2O) was studied. It was found that the oxidation rate of Cu2O implanted with B is as low as that of copper metal implanted with B. Further, it is observed that CuO forms on the surface of both B im planted Cu and Cu2O, in contrast to the Cu2O that forms on not implant ed copper. A mechanism which leads to these effects is briefly discuss ed.