INVESTIGATION OF THE ELEMENTS DEPTH PROFILES IN SURFACE-LAYERS OF GLASS MODIFIED BY ION-BEAM-ASSISTED DEPOSITION

Depth profiles of Ti, O, N, C, H, Cu and substrate atoms (Na, Ca, Si a nd O) were investigated in near-surface layers of glass. Rutherford Ba ckscattering Spectrometry (RBS) of He-4+ ions, non-Rutherford and reso nant elastic Backscattering Spectrometry (BS) of He-4+ and H-1+ ions ( reactions O-16(p, p)O-16, Si-28(p, p)Si-28, C-12(p, p)C-12 N-14(p, p)N -14 and O-16(He-4, He-4)O-16) and method of Elastic Recoil Detection ( ERD) of H-1 + using 2.4 MeV He-4 + analysis beam were applied in compl ex for the elements depth profiling. The sample was modified by using the new ion source TAMEK. The source operated in the regime of ion bea m assisted deposition (IBAD) of wide aperture (300 cm2) Ti ions flow ( ion implantation at average beam energy almost-equal-to 120 keV and si multaneous deposition of the same ions at energy 100 eV) in pulse mode . The sample preparation was carried out in a nitrogen atmosphere with the pressure of about 3 x 10(-4) Torr. Rate of dose accumulation at t he grounded target was almost-equal-to 10(16) ion/cm2 min. Surface tem perature of the sample was less than 50-degrees-C during IBAD treatmen t. Two characteristic areas were indicated in the modified layer: the mutual mixed Ti-glass layer and the coating with Ti, O, N, C, H and Cu composition. Total thickness of modified Ti-glass layer was found to be almost-equal-to 400 nm.