RANGE PARAMETERS OF C-13 IMPLANTS IN SEMICONDUCTOR AND METAL TARGETS

Authors
FRIEDLAND E HAYES M KALBITZER S OBERSCHACHTSIEK P
Citation
E. Friedland et al., RANGE PARAMETERS OF C-13 IMPLANTS IN SEMICONDUCTOR AND METAL TARGETS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 272-275
Citations number
15
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
85
Issue
1-4
Year of publication
1994
Pages
272 - 275
Database
ISI
SICI code
0168-583X(1994)85:1-4<272:RPOCII>2.0.ZU;2-Z
Abstract
Silicon, gallium arsenide and stainless steel samples were implanted w ith 150 keV C-13 ions at room and liquid-nitrogen temperatures. The de pth distributions were analyzed by making use of the narrow C-13(p, ga mma)-resonance at 1.75 MeV. The experimentally determined moments of t he depth distributions for gallium arsenide and stainless steel are in reasonable agreement with theoretical predictions. In the case of sil icon the agreement is less satisfactory, especially as far as the thir d and fourth moments are concerned. The experimental results indicate a symmetrical implantation profile in silicon, whilst from theoretical calculations a strongly skewed distribution is expected.