HIGH-RESOLUTION LOW-ENERGY RESONANCE DEPTH PROFILING OF O-18 IN NEAR-SURFACE ISOTOPIC TRACING STUDIES

The exceptional depth profiling potential of the almost-equal-to 100 e V narrow resonance in the O-18(p, alpha)N-15 nuclear reaction at 151 k eV is hindered by the low counting rates due to its low cross section. This drawback is in fact associated with Van de Graff type accelerato rs, that provide small proton beam currents at these low energies. In this paper we demonstrate experimentally that this disadvantage may be overcome with ion implantation type accelerators, which may deliver h igh proton currents. The very high depth resolution of this method in the first hundreds Angstroms of solids was put to benefit efficiently and without hindrance in O-18 isotopic tracing experiments applied to the systematic study of oxygen transport processes in various oxides. The method is illustrated by the study of various oxidation processes of silicon and of recoil implantation of oxygen into the silicon subst rate from very thin thermal oxide layers under As and Sb ion bombardme nt. Deep O-18 profiles could be measured in perpendicular geometry wit h energy straggling limited resolution. Shallow O-18 profiles in SiO2 films with thicknesses below 100 angstrom could be deduced from excita tion curves recorded in grazing incidence geometry.