PRACTICAL ASPECTS OF ION-BEAM ANALYSIS OF SEMICONDUCTOR STRUCTURES

Analytical techniques applied for semiconductor characterization have to be suitable for analyzing structured multilayer systems. High detec tion sensitivity has to be available together with high vertical and l ateral resolution. Analytical methods based on ion beams are among the most frequently used techniques applied for semiconductor diagnostic. In this paper the application of ion beam analysis for characterizati on of multilayer systems, for profiling of shallow elemental distribut ions, and for analysis of device structures will be discussed. Special emphasis will be put on fast, routine type measurements. The applicat ion of alternative methods based on electron beam - or X-ray analysis will also be shown.