SIMS AND DEPTH PROFILING OF SEMICONDUCTOR STRUCTURES

Authors
SVENSSON BG LINNARSSON MK MOHADJERI B PETRAVIC M WILLIAMS JS
Citation
Bg. Svensson et al., SIMS AND DEPTH PROFILING OF SEMICONDUCTOR STRUCTURES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 363-369
Citations number
36
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
85
Issue
1-4
Year of publication
1994
Pages
363 - 369
Database
ISI
SICI code
0168-583X(1994)85:1-4<363:SADPOS>2.0.ZU;2-G
Abstract
This paper reviews recent secondary ion mass spectrometry (SIMS) work on (i) isotope shifts in ion implantation profiles, (ii) dopant profil es in silicon and beam-induced oxidation and (iii) surface roughness a nd profile broadening of Al(x)Ga1-(x)As/GaAs superlattice structures. Comparison is made with other techniques, and, in particular, the issu es of depth resolution and conversion between sputtering time and samp le depth are emphasized.