LOW-ENERGY ION MIXING IN SI-GE MULTILAYER SYSTEM

AES depth profiling was carried out on a Ge-Si multilayer structure us ing rotated specimen and grazing incidence angle. Under these sputteri ng conditions the depth resolution is determined mainly by atomic mixi ng. The dependence of the experimentally measured atomic mixing on inc idence angle and energy was compared with the simulation results obtai ned from TRIM code. It was found that the trends of the dependencies w ere the same, but the TRIM predicted weaker atomic mixing than that of the experimental one. Thus we concluded that consideration of the the rmal processes is also important in the description of the atomic mixi ng in the Ge-Si system.