THE USE OF PIXE CHANNELING FOR THE LOCALIZATION OF ZINC IN INP/

InP is a promising material for use in optoelectronic and microwave de vices. Doping of InP with foreign atoms is applied for obtaining p-typ e conductivity, one dopant of interest being zinc. We investigated InP doped with zinc by diffusion in a semiclosed system as well as by imp lantation using various implantation conditions trying to find the pos ition of the zinc atoms in the host lattice. For that we used the ion channeling effect in conjunction with proton induced X-ray emission an d Rutherford backscattering spectrometry along some axial and planar d irections of the InP crystal. The ratio of interstitial to substitutio nal zinc atoms was investigated for both the as-doped and the annealed state. The results of the ion beam experiments were compared with tho se of Hall effect and SIMS measurements.