LATTICE LOCATION OF IMPLANTS IN DIAMOND BY CONVERSION ELECTRON-EMISSION CHANNELING

There is an increasing interest in diamond, inter alia, because of the efficient new metastable techniques of growing thin diamond films. Co nsequently, there is an increased potential for the industrial exploit ation of the unique properties of diamond as, for example, a specializ ed coating or as semiconductor devices. This requires extensive studie s of the physical processes of solid state chemistry and defect engine ering in diamond. Conversion electron emission channeling spectroscopy can be used to study lattice site occupancy and other more complex pr ocesses. Initial results show a significant population of the substitu tional site and also the importance of substrate temperature during im plantation for local annealing. In order to shorten the data acquisiti on time, and minimise radiation damage by implanting less activity, a two-dimensional position and energy sensitive detector, capable of acc umulating the whole angular scan simultaneously has been deployed.