RANGE PARAMETERS OF ER, GA AND F IMPLANTED INTO SIC FILMS

SiC films were implanted with Er, Ga and F in a 20-300 keV energy rang e. Range parameters were determined using the Rutherford backscatterin g and nuclear reaction analysis techniques. The Er and Ga experimental results are higher than the theoretical predictions by Ziegler, Biers ack and Littmark. Good agreement is achieved where inelastic effects a re included in the nuclear stopping regime. This fact fits in an emerg ing picture which shows that these effects are important whenever medi um-heavy ions are implanted into light substrates.