A. Kinomura et al., OBSERVATION OF LOCAL SIMOX LAYERS BY MICROPROBE RBS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 921-924
Buried oxide layers locally formed by oxygen implantation in silicon w
ere analyzed by Rutherford backscattering with a 1.5 MeV He+ microprob
e. Lateral and cross-sectional images of O and Si atoms in the buried
oxide layers could be successfully obtained by scanning the microprobe
over the sample. The Si images showed better contrasts than the O ima
ges. A process-failure region was detected by RBS mapping images.