TRANSPORT AND LOCALIZATION IN ND1.82CE0.18CUO4-DELTA FILM

Citation
Ai. Ponomarev et al., TRANSPORT AND LOCALIZATION IN ND1.82CE0.18CUO4-DELTA FILM, Journal of low temperature physics, 105(3-4), 1996, pp. 939-943
Citations number
5
Categorie Soggetti
Physics, Applied
ISSN journal
00222291
Volume
105
Issue
3-4
Year of publication
1996
Pages
939 - 943
Database
ISI
SICI code
0022-2291(1996)105:3-4<939:TALINF>2.0.ZU;2-E
Abstract
Temperature- and magnetic - field - dependences of the resistivity rho and Hall effect R(H) (<(j)over right arrow parallel to ab, (B) over r ight arrow parallel to c) in Nd1.82Ce0.18CuO4-delta single crystal fil m (T-c = 6 K) were investigated at temperatures 1.4 less than or equal to T less than or equal to 20 K and magnetic fields 0 less than or eq ual to B less than or equal to 5.5 T. At the lowest temperature T = 1. 4 K the resistive slate and Hall effect appear at the same magnetic fi eld B = 0.5 T. A transition to the normal state is completed at B-c2 s imilar or equal to 3 T when a Hall coefficient becomes almost invariab le. The negative magnetoresistance (d rho/dB < 0) al B > 3 T was obser ved also. The sign change of the temperature coefficient d rho/dT corr esponds B = 1.06 T. This fact does not connect with transition in a ne w state but this is an accidental compensation of two factors: a decre asing of B-c2 with temperature and negative value dp/dT in the normal state outing to weak localization effect.