Bb. Elenkrig et al., EXPERIMENTAL-STUDY OF IMPLANTATION-INDUCED DISORDERING IN INGAASP STRAINED MULTIPLE-QUANTUM-WELL HETEROSTRUCTURES, Applied physics letters, 65(10), 1994, pp. 1239-1241
The effect of strain on F+ and Si+ implantation-induced compositional
disordering in InGaAsP strained layer multiple-quantum-well (MQW) hete
rostructures has been studied by investigating the temperature depende
nce of the photoluminescence (PL) spectra and spatial distribution of
degree of polarization of PL for both compressive and tensile strained
, and unstrained MQW heterostructures. It was found that under similar
implantation and anneal conditions a spectral blueshift occurs which
is largest in the compressively strained structure and the smallest in
the tensile one. This behavior is explained in terms of implantation-
enhanced interdiffusion, by taking into account the composition differ
ences of elements between the wells and barriers. The development of s
train related to the process of interdiffusion has been experimentally
observed.