ON THE GENERATION OF INTERFACE STATES FROM ELECTRON-HOLE RECOMBINATION IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS

In this study, we have measured the interface state generation rate re sulting from the recombination of free electrons and trapped holes, wh ich occurs either away from or near the silicon/silicon dioxide interf ace. For recombination events that occur away from the silicon/silicon dioxide interface (by using hole trapping on bulk-oxide ion-implanted arsenic sites), we find an interface state generation rate of approxi mately 0.024 states per recombination event. For recombination near th e silicon/silicon dioxide, the generation rate increases by more than an order of magnitude to approximately 0.27 states per event. Therefor e, interface states are more readily produced from electron/hole recom bination events that occur near the Si/SiO2 interface.