MAGNESIUM DOPING OF INGAALP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Authors
WU CC CHANG CY CHEN PA CHEN HD LIN KC CHAN SH
Citation
Cc. Wu et al., MAGNESIUM DOPING OF INGAALP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 65(10), 1994, pp. 1269-1271
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
10
Year of publication
1994
Pages
1269 - 1271
Database
ISI
SICI code
0003-6951(1994)65:10<1269:MDOIGB>2.0.ZU;2-E
Abstract
Bis(cyclopentadienyl) magnesium, CP2Mg, was used as a magnesium dopant in the InGaAlP layers by low-pressure metalorganic chemical vapor dep osition. The hazy surface morphology of heavily doped InGaAlP layers i s significantly improved by using magnesium dopant instead of the conv entional zinc dopant. We demonstrate that the effective doping efficie ncy of magnesium is two orders of magnitude higher than that of zinc d opant in the heavily doped InGaAlP layer grown at 720-degrees-C.