ROUGH VERSUS DILUTE INTERFACES IN SEMICONDUCTOR HETEROSTRUCTURES - THE ROLE OF GROWTH-CONDITIONS

Authors
GRIESHABER W BODIN C CIBERT J GAJ J DAUBIGNE YM WASIELA A FEUILLET G
Citation
W. Grieshaber et al., ROUGH VERSUS DILUTE INTERFACES IN SEMICONDUCTOR HETEROSTRUCTURES - THE ROLE OF GROWTH-CONDITIONS, Applied physics letters, 65(10), 1994, pp. 1287-1289
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
10
Year of publication
1994
Pages
1287 - 1289
Database
ISI
SICI code
0003-6951(1994)65:10<1287:RVDIIS>2.0.ZU;2-K
Abstract
CdTe-CdMnTe interfaces grown by molecular beam epitaxy are studied usi ng excitons confined in quantum wells. For increasing growth temperatu res Zeeman splittings indicate an enhanced dilution of Mn ions at the interface while the optical linewidths evidence a decreasing roughness . These results directly illustrate the fact that the two methods are sensitive to different scales of interface broadening.