Microcrystalline silicon (mu-Si) thin films were anodized in dilute HF
solutions in the same manner as forming porous materials. It is demon
strated for the first time that the anodized mu-Si thin films show str
ong violet luminescence (415 nm) at room temperature. Visible green an
d red emissions were also observed accompanying the violet luminescenc
e. Structural investigations with scanning electron microscopy indicat
e that any formation of micrometer-sized pores which is typical for po
rous silicon does not exist in the anodized mu-Si thin films as report
ed here. This fact is useful for device applications of silicon-based
materials.