SiC coatings have been deposited by dynamic ion mixing (DIM) at room t
emperature on TA6V substrates. The depositing atom Bur was obtained by
sputtering a SiC target with a 1.2 keV Ar+ ion beam delivered by a Ka
ufman-type ion source. The coatings prepared without mixing are amorph
ous whereas those deposited by DIM exhibit the beginning of crystalliz
ation and their chemical analysis has revealed a relative excess of Si
, The intrinsic hardness of 0.86 mu m SiC coatings was determined by a
pplication of a composite hardness model. Fully crystallized coatings
obtained by thermal annealing exhibit higher hardness value whereas th
eir adhesion performance is worse than partially amorphous coatings pr
epared by DIM. The wear and friction of TA6V are always improved by SI
C coatings. In addition to the influence of the mixing effect, this st
udy has demonstrated the importance of the structural state of the coa
ting since SiC crystallized surfaces respond Very differently from the
amorphous surfaces, as previously observed for bulk SiC.