PHASE MANIPULATION OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS

The nucleation and island growth behaviour for molecular beam epitaxy of Si on Si(111) during intermittent radiant heating has been investig ated using reflection high-energy electron diffraction (RHEED) intensi ty oscillations. It is found that periodic temperature variations can determine the period and phase of RHEED oscillations. Large beatings i n the oscillations are observed when the temperature period is differe nt from the bilayer deposition period. By taking the time-dependent ho pping rates into account, we find an excellent agreement between Monte Carlo simulations and experimental results.